Two-Photon Spectroscopy of Acetylene - Photodissociation Processes at 9-10 eV Energy Levels

The gerade states of acetylene at 9-10 eV have been studied by monitoring the C₂ emission. Larger Δv₂ excitations are seen than previously reported by Ashfold et al. The observed two-photon resonant levels show extensive predissociation. Experimental evidence from the two-color photofragment excitation measurement is given to support the conclusion that the excited-state ethynyl radical and atomic hydrogen are the corresponding predissociation products. Most C₂ emissions seen in this work are due to the subsequent photodissociation of the intermediate C₂H to C₂ (d³Π_g).     

Very efficient two-photon induced photo-tautomerization in non-symmetrical phthalocyanines

In this work we demonstrate that non-symmetrically substituted phthalo-naphthalocyanine molecule can have extremely large 2PA cross section in near-resonance conditions of excitation. We also show the possibility to switch between its two tautomeric forms upon two-photon excitation at 77 K. By measuring 2PA cross section, quantum efficiency of transformation in these two forms, as well as quantum yield of fluorescence, we evaluate the figure of merit for fast re-writable 3D information storage and show that this figure meets the criteria of reliable and fast (one bit per one femtosecond pulse) 2PA writing or reading.     

A-B2型含二苯甲酮的对硝基二苯乙烯类染料的合成、双光子性质与电化学

报道了3',4'-二(对苯甲酰基苯甲氧)基-4-硝基二苯乙烯(C1)的合成与表征. 研究了在不同溶剂中分子的吸收与荧光发射. 分子在可见光区的吸收可以归于生色团对硝基二苯乙烯部分的贡献, 而其在短波长区的吸收主要由二苯甲酮部分提供. 分子在中等极性溶剂中表现出较强的荧光发射. 系统研究了3',4'-二(对苯甲酰基苯甲氧)基-4-硝基二苯乙烯与2',4'-二(对苯甲酰基苯甲氧)基-4-硝基二苯乙烯(C2)两种A-B2型分子的双光子性质与电化学行为. 结果表明, 在800 nm波长的飞秒激光激发下, 两个分子皆表现出明显的上转换荧光发射, 其双光子吸收横截面的大小与二苯甲酮取代位置表现出一定的相关性. 分子结构优化与电化学的研究表明, 两个分子的电子密度分布与前线轨道能量亦与二苯甲酮取代位置表现出一定的相关性.     

用光电子成像技术研究Cu-的飞秒双光子光脱附过程

用光电子成像技术研究了Cu^-的飞秒双光子光脱附过程．光脱附产生的光电子能量分布和角度分布通过光电子成像直接获得．实验发现,在光强为6.0×10¹⁰ W/cm²下,双光子光脱附通道的光电子角度分布随激光波长出现剧烈的变化．通过低阶微扰理论和实验结果对比分析,Cu^-的双光子脱附产生的光电子角度分布特征可以归结于脱附过程中Cu^-的s和d轨道波函数之间的干涉效应．通过分析光电子角度分布特征,获得了不同波长下s和d轨道波函数对双光子脱附过程的贡献,该结果符合Wigner阈值理论的预期．     

Determination of the surface states from the ultrafast electronic states in a thermoelectric material

We reveal the electronic structure in Yb Cd₂Sb₂,a thermoelectric material,by angle-resolved photoemission spectroscopy(ARPES)and time-resolved ARPES(tr ARPES).Specifically,three bulk bands at the vicinity of the Fermi level are evidenced near the Brillouin zone center,consistent with the density functional theory(DFT)calculation.It is interesting that the spin-unpolarized bulk bands respond unexpectedly to right-and left-handed circularly polarized probe.In addition,a hole band of surface states,which is not sensitive to the polarization of the probe beam and is not expected from the DFT calculation,is identified.We find that the non-equilibrium quasiparticle recovery rate is much smaller in the surface states than that of the bulk states.Our results demonstrate that the surface states can be distinguished from the bulk ones from a view of time scale in the nonequilibrium physics.     

Anisotropy of electron structure at InAs(1 1 1) surfaces by laser pump-and-probe photoemission spectroscopy

The electronic structure and the electron dynamics of the clean InAs(1 1 1)A 2 × 2 and the InAs(1 1 1)B 1 × 1 surfaces have been studied by laser pump-and-probe photoemission spectroscopy. Normally unpopulated electron states above the valence band maximum (VBM) are filled on the InAs(1 1 1)A surface due to the conduction band pinning above the Fermi level (E_F). Accompanied by the downward band banding alignment, a charge accumulation layer is confined to the surface region creating a two dimensional electron gas (2DEG). The decay of the photoexcited carriers above the conduction band minimum (CBM) is originated by bulk states affected by the presence of the surface. No occupied states were found on the InAs(1 1 1)B 1 × 1 surface. This fact is suggested to be due to the surface stabilisation by the charge removal from the surface into the bulk. The weak photoemission intensity above the VBM on the (1 1 1)B surface is attributed to electron states trapped by surface defects. The fast decay of the photoexcited electron states on the (1 1 1)A and the (1 1 1)B surfaces was found to be τ_1 1 1 A ? 5 ps and τ_1 1 1 B ?  4 ps, respectively. We suggest the diffusion of the hot electrons into the bulk is the decay mechanism.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.     

A detailed analysis of the photoemission spectra of basic thioaromatic monolayers on noble metal substrates

Analysis of photoemission spectra of complex thioaromatic self-assembled monolayers (SAMs) requires the knowledge and understanding of such spectra for the basic systems. Keeping this goal in mind, synchrotron-based high-resolution X-ray photoelectron spectroscopy was used to characterize SAMs formed from the simplest thioaromatic compounds, namely thiophenol, 1,1′-biphenyl-4-thiol and 1,1′;4′,1″-terphenyl-4-thiol on evaporated Au(1 1 1) and Ag(1 1 1) substrates. The acquired S 2p and C 1s spectra were analyzed in terms of fine structure and initial and final state effects in the photoemission process. The assignment of the individual spectral features was considered in detail. Conclusions on quality and chemical and structural homogeneity of the investigated SAMs were derived.     

C-Fe chains due to segregated carbon impurities on Fe(1 0 0)

Bulk carbon impurities segregate at the Fe(1 0 0) surface and, upon thermal annealing, can form metastable surface phases with local and long range order and peculiar electronic properties. We present a surface science study of C-segregated Fe(1 0 0) with scanning tunneling microscopy, angle resolved photoemission, and ab initio calculations of the surface structure and electron states. In particular the c(3√2 × √2) structure, observed for 0.67 atomic layers of C segregated at the iron surface, is found to be due to self-organized carbon stripes made of zig-zag chains. The strong hybridization between C and Fe was observed in ARPES spectra.